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SFDP12N65
Brief
These N-channel enhancement mode power field effecttransistors are produced using Hi-semicon's proprietary , planastripe , DMOS technologyThis advanced technology has been especially tailored tominimize on-state resistance , provide superior switchingperformance , and withstand high energy pulse in theavalanche and commutation mode . These devices are welsuited for high efficiency switched mode power supplies ,active power factor correction , electronic lamp ballastsbased on half bridge topology
Details
 
Features Application
  • VDS(V)=650V, ID=12A                                                                                          
  • RDS(ON)
TYP:675mΩ@VGS=10V   ID=6A
MAX:800mΩ
  • Power faction correction (PFC)                                                                                               
  • Switched mode power supplies (SMPS)
  • Uninterruptible power supply (UPS)
  • LED lighting power