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SCX65R540T
Brief
The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
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Features Application
  • VDS=650V, ID=8A
  • VDS,min@Tj(max)=700V                                                                                   
  • RDS(ON)
TYP:520mΩ@VGS=10V , ID=4A
 
  • Power faction correction (PFC)                                                                                       
  • Switched mode power supplies (SMPS)
  • Uninterruptible power supply (UPS)
  • LED lighting power