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SCX70R360C
Brief
The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency.
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Features Application
  • VDS(V)=700V,ID=13A                                                                                     
  • RDS(ON)
TYP:310mΩ@VGS=10V , ID=6.5A
MAX:360mΩ
  • Power faction correction (PFC)                                                                                       
  • Switched mode power supplies (SMPS)
  • Uninterruptible power supply (UPS)
  • LED lighting power