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SFX10N65
Brief
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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Features Application
  • VDS(V)=650V, ID=10A                                                                                     
  • RDS(ON) 
TYP:0.8Ω@VGS=10V, ID=5A
MAX:1.0Ω
  • Power faction correction (PFC)                                                                                       
  • Switched mode power supplies (SMPS)
  • Uninterruptible power supply (UPS)
  • LED lighting power