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SCX60R190C
Brief
The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency.
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Details
 
Features Application
  • VDS(V)=600V, ID=20A                                                                                   
  • RDS(ON)
TYP:156mΩ@VGS=10V   ID=10A
MAX:190mΩ
  • Power faction correction (PFC)                                                                                      
  • Switched mode power supplies (SMPS)
  • Uninterruptible power supply (UPS)
  • LED lighting power