Details
Features
◆VDS=-30V,ID=-4.2A
◆RDS(ON)
TYP:50mΩ@VGS=-10V,ID=-4.0A
TYP:50mΩ@VGS=-10V,ID=-4.0A
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- FIELD EFFECT TRANSISTOR
- SCHOTTKY DIODES
- ULTRAFAST RECOVERY POWER RECTIFIER
- SIC SCHOTTKY DIODES
- Silicon carbide MOSFET
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Address：Room 402-404,Qianhai ChengJin Building,Moon Bay Boulevard, Nanshan District,Shenzhen
Tel：0755-88327180
Fax：0755-88327190
Email：sunny@hisemicon.com
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