Details
Features
◆VDS=30V,ID=5.2A
◆RDS(ON)
TYP:24.0mΩ@VGS=10V,ID=4.0A
TYP:28.0mΩ@VGS=4.5V,ID=3.0A
TYP:35.0mΩ@VGS=2.5V,ID=3.0A
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- FIELD EFFECT TRANSISTOR
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Address：Room 402-404,Qianhai ChengJin Building,Moon Bay Boulevard, Nanshan District,Shenzhen
Tel：0755-88327180
Fax：0755-88327190
Email：sunny@hisemicon.com
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